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  bc846a/b, bc847a/b/c, bc848a/b/c 250mw, npn small signal transistor small signal transistor ? surface device type mounting ? moisture sensitivity level 1 ? matte tin(sn) lead finish with nickel(ni) underplate ? pb free version and rohs compliant min max min max ? case : sot- 23 small outline plastic package 2.80 3.00 0.110 0.118 1.20 1.40 0.047 0.055 0.30 0.50 0.012 0.020 1.80 2.00 0.071 0.079 2.25 2.55 0.089 0.100 0.90 1.20 0.035 0.043 package packing marking sot-23 3k / 7" reel 1a sot-23 3k / 7" reel 1b sot-23 3k / 7" reel 1e sot-23 3k / 7" reel 1f sot-23 3k / 7" reel 1g sot-23 3k / 7" reel 1j sot-23 3k / 7" reel 1k sot-23 3k / 7" reel 1l sot-23 3k / 7" reel 1a sot-23 3k / 7" reel 1b sot-23 3k / 7" reel 1e sot-23 3k / 7" reel 1f sot-23 3k / 7" reel 1g sot-23 3k / 7" reel 1j sot-23 3k / 7" reel 1k sot-23 3k / 7" reel 1l maximum ratings bc846 bc847 bc848 bc846 bc847 bc848 bc846 bc847 bc848 notes:1. valid provided that electrodes are kept at ambient temperature units c 0.1 -55 to + 150 a mw v ordering information part no. bc846a rf bc846b rf junction and storage temperature range t j , t stg v ebo collector current i c emitter-base voltage ? high temperature soldering guaranteed: 260 c/10s f d e features mechanical data ? green compound (halogen free) with suffix "g" on packing code and prefix "g" on date code a rating at 25 c ambient temperature unless otherwise specified. b power dissipation p d bc847a rf bc847b rf bc847c rf bc848a rf value bc846a rfg suggested pad layout v v 65 45 30 80 50 30 bc848c rf bc846b rfg bc847a rfg bc847b rfg unit (mm) ? terminal: matte tin plated, lead free., solderable per mil-std-202, method 208 guaranteed 6 6 5 250 collector-base voltage collector-emitter voltage v cbo v ceo unit (inch) dimensions sot-23 type number symbol ? epitaxial planar die construction bc848b rf ? weight : 0.008gram (approximately) maximum ratings and electrical characteristics c bc847c rfg bc848a rfg bc848b rfg bc848c rfg b a c d f e 2 emitter 3 collector 1 base 2.0 0.079 0.95 0.037 0.9 0.035 0.8 0.031 version : e11
bc846a/b, bc847a/b/c, bc848a/b/c 250mw, npn small signal transistor small signal transistor electrical characteristics units collector-base breakdown voltage bc846 bc847 bc848 i c = 10ai e = 0 v collector-emitter breakdown voltage bc846 bc847 bc848 i c = 10ma i b = 0 v bc846 bc847 bc848 i e = 1ai c = 0 v v cb = 30v i e = 0 na v eb = 5v i c =0 a v ce = 5v i c = 2ma i c = 100ma i b = 5ma v i c = 100ma i b = 5ma v v ce = 5v i c = 10ma f= 100mhz mhz tape & reel specification carrier width carrier length carrier depth sprocket hole reel outside diameter reel inner diameter feed hole width sprocke hole position punch hole position sprocke hole pitch embossment center overall tape thickness tape width reel width emitter-base breakdown voltage collector-emitter saturation voltage v ce(sat) base-emitter saturation voltage v be(sat) 0.5 1.1 178 1 d d c 2.77 0.10 1.22 0.10 55 min item symbol dimension(mm) a b 3.15 0.10 1.50 0.10 type number 80 50 30 symbol v (br)cbo 220 450 800 -1 5 min max 65 45 30 transition frequency w1 p0 p1 100 f t - t d1 d2 i cbo v (br)ceo v (br)ebo 12.30 0.20 8.10 0.20 w 4.00 0.10 e f - 13.0 0.20 1.75 0.10 3.50 0.05 - - - - 6 6 5 0.1 bc846a, bc847a, bc848a dc current gain bc846b, bc847b, bc848b bc847c, bc848c 2.00 0.05 0.229 0.013 collector cut-off current i ebo - 110 200 420 h fe emitter cut-off current w1 d1 d2 d t c d p1 p0 a b f w e direction of feed top cover tape carieer tape any additional label (if required) tsc label version : e11
bc846a/b, bc847a/b/c, bc848a/b/c 250mw, npn small signal transistor small signal transistor rating and characteristic curves version : e11 0481 21 62 0 0 20 40 60 80 100 i b = 50 a i b = 100 a i b = 150 a i b = 200 a i b = 250 a i b = 300 a i b = 350 a i b = 400 a i c [ma], collector current v ce [v], collector-emitter voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 v ce = 2v i c [ma], collector current v be [v], base-emitter voltage 1 10 100 1000 0.1 1 10 100 f=1mhz c ob [pf], capacitance v cb [v], collector-base voltage 0.1 1 10 100 1 10 100 1000 v ce =5v f t [mhz], current gain-bandwidth product i c [ma], collector current figure 6. current gain bandwidth product figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 5. collector output capacitance figure 2. dc current gain figure 4. base-emitter on voltage fi gure1. static characteristic handbook, halfpage mgt723 10 -1 11010 2 10 3 i c (ma) 0 400 300 200 100 h fe (1) (2) (3) v ce =5v. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. handbook, halfpage mgt724 10 -1 11010 2 10 3 i c (ma) 0 1200 1000 800 600 400 200 v be (mv) (1) (2) (3) v ce =5v. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 150 c.


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